Electric-field-dependent spectroscopy of charge motion using a single-electron transistor

被引：15

作者：

Brown, KR ^{[1
]}

Sun, L ^{[1
]}

Kane, BE ^{[1
]}

机构：

[1] Lab Phys Sci, College Pk, MD 20740 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 21期

关键词：

D O I：

10.1063/1.2207557

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present observations of background charge fluctuators near an Al-AlOx-Al single-electron transistor on an oxidized Si substrate. The transistor design incorporates a heavily doped substrate and top gate, which allow for independent control of the substrate and transistor island potentials. Through controlled charging of the Si/SiO2 interface we show that the fluctuators cannot reside in the Si layer or in the tunnel barriers. Combined with the large measured signal amplitude, this implies that the defects must be located very near the oxide surface. (c) 2006 American Institute of Physics.

引用

页数：3

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