Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation

被引：0
|
作者：
Hu, Kuan-Kan [1 ]
Chang, Ruey-Dar [2 ]
Woon, Wei Yen [1 ]
机构：
[1] Natl Cent Univ, Dept Phys, Jhongli 32054, Taiwan
[2] Chang Gung Univ, Taoyuan 33302, Taiwan
来源：
AIP Advances | 2015年 / 5卷 / 10期
关键词：
ION-IMPLANTED SILICON; DOPANT DIFFUSION; STRESS; MECHANISMS; DEFECTS; MOSFETS; IMPACT; SI;
D O I：
10.1063/1.4934674
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We investigate the evolution of two dimensional transient enhanced diffusion (TED) of phosphorus in sub-micron scale patterned silicon template. Samples doped with low dose phosphorus with and without high dose silicon self-implantation, were annealed for various durations. Dopant diffusion is probed with plane-view scanning capacitance microscopy. The measurement revealed two phases of TED. Significant suppression in the second phase TED is observed for samples with high dose self-implantation. Transmission electron microscopy suggests the suppressed TED is related to the evolution of end of range defect formed around ion implantation sidewalls. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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页数：5
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