Improvement in Electrical Stability of a-IGZO TFTs Using Thinner Dual-Layer Dielectric Film

被引：1
作者：
Kim, Jong-Woo [1 ]
Seo, Hyun Kyu [2 ]
Lee, Su Yeon [2 ]
Park, Minsoo [2 ]
Yang, Min Kyu [2 ]
Ju, Byeong-Kwon [1 ]
机构：
[1] Korea Univ, Dept Elect Engn, Display & Nanosensor Lab, Seoul 02841, South Korea
[2] Sahmyook Univ, Artificial Intelligence Convergence Res Lab, Seoul 01795, South Korea
来源：
METALS | 2022年 / 12卷 / 10期
关键词：
a-IGZO; dual-layer dielectric; high-K; oxide TFT; GA-ZN-O; PERFORMANCE; TRANSISTORS; TRANSPORT; CONTACT; OXIDES; SIO2;
D O I：
10.3390/met12101663
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This study investigates the effect of gate insulators on thin-film transistors (TFTs) using an amorphous InGaZnO4 (a-IGZO) channel layer. TFTs with single-layer Ta2O5 and dual-layer Ta2O5/SiO2 gate insulators were fabricated on a glass substrate. An evaluation of the insulating film using the MIM (Metal-Insulator-Metal) structure confirmed its electrical characteristics. Microscopic imaging showed that the dual-layer Ta2O5/SiO2 dielectric significantly improved surface characteristics. A reduction in the leakage current, better on/off ratios, and a decreased subthreshold swing (SS) compared to a single-layer Ta2O5 dielectric were reported. The dual-layer insulator composed of SiO2/Ta2O5 was highly effective in improving device characteristics.
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页数：9
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