Influence of Si/Fe ratio in multilayer structures on crystalline growth of β-FeSi2 thin film on Si substrate

被引：13

作者：

Liu, Zhengxin ^{[1
,3
]}

Tanaka, Miyoko ^{[2
]}

Kuroda, Ryo ^{[1
]}

Osamura, Masato ^{[3
]}

Makita, Yunosuke ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, AIST Tsukuba Cent 2, Tsukuba, Ibaraki 3058568, Japan

[2] Natl Inst Mat Sci, High Voltage Elect Microscopy Stn, Tsukuba, Ibaraki 3050003, Japan

[3] Syst Engn Co Ltd, AIST Tsukuba W, Dev Technol Dept, Tsukuba, Ibaraki 3058569, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 02期

关键词：

D O I：

10.1063/1.2957990

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The deposited Si/Fe ratio has been found to have a significant influence on crystalline growth of beta-FeSi(2) film on Si substrate. Stoichiometry is always satisfied by interdiffusion of Si, under both Si-lean and Si-rich conditions. However, Si diffusion from the substrate into the deposited layer, which compensates for deficient Si, induces an undulated interface, as well as Fe and Si vacancies. On the other hand, excess Si is driven to the beta-FeSi(2)/Si interface, which results in a lamellar structure with a large number of small grains. Fe and Si vacancies are significantly reduced by excess Si. These results suggest that precise control of the Si/Fe ratio is essential for good crystallinity and fewer vacancies. (C) 2008 American Institute of Physics.

引用

页数：3

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