Characterisation of a silicon photomultiplier device for applications in liquid argon based neutrino physics and dark matter searches

被引：48

作者：

Lightfoot, P. K. ^{[1
]}

Barker, G. J. ^{[2
]}

Mavrokoridis, K. ^{[1
]}

Ramachers, Y. A. ^{[2
]}

Spooner, N. J. C. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[2] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

JOURNAL OF INSTRUMENTATION | 2008年 / 3卷 / 10期

基金：

英国科学技术设施理事会;

关键词：

Photon detectors for UV; visible and IR photons (solid-state) (PIN diodes; APDs; Si-PMTs; CCDs; EBCCDs etc); Solid state detectors;

D O I：

10.1088/1748-0221/3/10/P10001

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The performance of a silicon photomultiplier has been assessed at low temperature in order to evaluate its suitability as a scintillation readout device in liquid argon particle physics detectors. The gain, measured as 2.1 x 10(6) for a constant over-voltage of 4V was measured between 25 degrees C and -196 degrees C and found to be invariant with temperature, the corresponding single photoelectron dark count rate reducing from 1MHz to 40Hz respectively. Following multiple thermal cycles no deterioration in the device performance was observed. The photon detection efficiency (PDE) was assessed as a function of photon wavelength and temperature. For an over-voltage of 4V, the PDE, found again to be invariant with temperature, was measured as 25% for 460nm photons and 11% for 680nm photons. Device saturation due to high photon flux rate, observed both at room temperature and -196 degrees C, was again found to be independent of temperature. Although the output signal remained proportional to the input signal so long as the saturation limit was not exceeded, the photoelectron pulse resolution and decay time increased slightly at - 196 degrees C.

引用

页数：21

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