Numerical Modeling of Two RF Discharge Structure in Plasma-Chemical Etching Reactor

被引：0

作者：

Grigoryev, Yurii N. ^{[1
]}

Gorobchuk, Aleksey G. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Computat Technol, Siberian Branch, Novosibirsk 630090, Russia

来源：

2013 INTERNATIONAL SIBERIAN CONFERENCE ON CONTROL AND COMMUNICATIONS (SIBCON) | 2013年

关键词：

RF discharge; hydrodynamical model; plasma-chemical etching;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The plasma-chemical etching technology in RF discharge was simulated in hydrodynamical approach. The calculations based on the mathematical model of plasma-chemical reactor in which gas flow was described by the convective-diffusion equations of multicomponent physical-chemical hydrodynamics. For the definition of main characteristics of low-temperature plasma the hydrodynamical model of axisymmetric RF discharge was used. The model included the continuity equations for electrons and ions, electron energy balance equation and Poisson equation for electric potential. The influence of RF discharge structure on the production of active particles in the plasma-chemical etching reactor was studied.

引用

页数：4

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