Characterization of p-type buffer layers for SiC microwave device applications

被引：0

作者：

Konstantinov, AO ^{[1
]}

Karlsson, S ^{[1
]}

Nilsson, PÅ ^{[1
]}

Saroukhan, AM ^{[1
]}

Svedberg, JO ^{[1
]}

Nordell, N ^{[1
]}

Harris, CI ^{[1
]}

Eriksson, J ^{[1
]}

Rorsman, N ^{[1
]}

机构：

[1] Ind Microelect Ctr, S-16440 Kista, Sweden

来源：

WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999 | 1999年 / 572卷

关键词：

D O I：

10.1557/PROC-572-197

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low-loped p-type silicon carbide buffer layers are grown by chemical vapor deposition on conducting and semi-insulating substrates. Capacitance-voltage and electrical admittance techniques are developed for accurate non-destructive characterization. The electrical admittance techniques suggested are capable of measuring the resistivity in a very wide range, up to 7 orders of magnitude. MESFET devices using thick buffer layers on conducting substrates are reported with F-t = 8.4 GHz and F-max = 32 GHz.

引用

页码：197 / 200

页数：4

共 4 条

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