Fabrication of InGaAs/GaAs quantum wires on a non-(111) V-grooved GaAs substrate by chemical beam epitaxy

We have successfully grown InGaAs/GaAs quantum wire (QWR) structures on a non-(111) V-grooved GaAs(100) substrate by chemical beam epitaxy (CBE) using triethylgallium, trimethylindium and unprecracked monoethylarsine. To improve the lateral confinement, we have used non-(111) V-grooves which have planes close to (322), where (111) planes are formed near the bottom region during growth, confining QWRs effectively at the bottom of V-grooves. An optimum growth temperature of InGaAs/GaAs QWRs was found by examining the temperature-dependent growth rates corresponding to various crystal orientations. Three significant PL peaks wen observed at 77 K and related to side QWLs, top QWLs and QWRs with peak energies of 1.439, 1.389 and 1.240 eV, respectively. The luminescence from the QWRs could be still observed even at 200 K. These results suggest that our method using non-(111) V-grooves and unprecracked MEAs is useful method for fabrication of InGaAs/GaAs QWRs.