A 15 GHz and a 20 GHz low noise amplifier in 90 nm RF-CMOS

被引：0
作者：
Aspemyr, L [1 ]
Jacobsson, H
Bao, MQ
Sjöland, H
Femdahl, M
Carchon, G
机构：
[1] Ericsson AB, Molndal, Sweden
[2] Lund Univ, Lund, Sweden
[3] Chalmers, Gothenburg, Sweden
[4] IMEC, Leuven, Belgium
来源：
2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2006年
关键词：
low-noise amplifier; 90; nm; LNA; noise figure; RF-CMOS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The design and measured performance of two low-noise amplifiers at 15 GHz and 20 GHz realized in a 90 nm RF-CMOS process are presented in this work. The 15 GHz LNA achieves a power gain of 12.9 dB, a noise figure of 2.0 dB and an input referred third-order intercept point (IIP3) of -2.3 dBm. The 20 GHz GHz LNA has a power gain of 8.6 dB, a noise figure of 3.0 dB and an IIIP3 of 5.6 dBm. Compared to previously reported designs, these two LNAs show lower noise figure at lower power consumption.
引用
收藏
页码：387 / +
页数：2
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