Charge transport in anthradithiophene single crystals

被引：1
作者：
Schoen, J. H. [1 ]
Kloc, Ch. [1 ]
Siegrist, T. [1 ]
Laquindanum, J. [1 ]
Katz, H. E. [1 ]
机构：
[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA
来源：
ORGANIC ELECTRONICS | 2001年 / 2卷 / 3-4期
关键词：
Charge transport; Anisotropy; Thiophene; Mobility; Transistor;
D O I：
10.1016/S1566-1199(01)00022-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The intrinsic charge transport mechanism in anthradithiophene single crystals is investigated by temperature dependent space charge limited current spectroscopy. The mobility for in-plane transport in this layered p-type semiconductor exhibits an inverse power law temperature dependence, typical for coherent band-like charge transport. In contrast to that a thermally activated charge transport perpendicular to the molecular planes can be described by incoherent hopping motion. Consequently, the charge carriers (holes) can be characterized as partly delocalized between molecules of a given molecular layer, but localized within individual molecular layers. The results are compared to the related compounds, pentacene and alpha-sexithiophene, in order to investigate the influence of the sulfur orbitals on hole transport in these and other thiophene-based molecular materials. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：165 / 169
页数：5
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