Electron and optical beam testing of integrated circuits using CIVA, LIVA, and LECIVA

被引:4
作者
Cole, EI
机构
[1] Electronics Qual./Reliability Center, Sandia National Laboratories, MS 1081, Albuquerque
关键词
D O I
10.1016/0167-9317(95)00321-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Charge-Induced Voltage Alteration (CIVA), Light-Induced Voltage Alteration, (LIVA), and Low Energy CIVA (LECIVA) are three new failure analysis imaging techniques developed to quickly localize defects on ICs [1-3]. All three techniques utilize the voltage fluctuations of a constant current power supply as an electron or photon beam is scanned across an IC. CIVA and LECIVA yield rapid localization of open interconnections on ICs. LIVA allows quick localization of open-circuited and damaged semiconductor junctions. LIVA can also be used to image transistor logic states and can be performed from the backside of ICs with an infrared laser source. The physics of signal generation for each technique and examples of their use in failure analysis are described.
引用
收藏
页码:13 / 24
页数:12
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