Infra-red, X-ray photoelectron spectroscopy and electrical studies of r.f. sputtered amorphous silicon carbide films

被引：3
|
作者：
Han, LJ
Ong, TY
Prakash, S
Chua, LG
Choi, WK
Tan, LS
Loh, FC
Tan, KL
机构：
[1] Natl Univ Singapore, Dept Elect Engn, Microelect Lab, Singapore 119260, Singapore
[2] Natl Univ Singapore, Dept Phys, Surface Sci Lab, Singapore 119260, Singapore
来源：
THIN SOLID FILMS | 1999年 / 343卷
关键词：
annealing; FTIR; amorphous silicon carbide; sputtering; X-ray photoelectron spectroscopy;
D O I：
10.1016/S0040-6090(98)01660-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of furnace and rapid thermal annealing (RTA) on the electrical and structural properties of r.f. sputtered amorphous silicon carbide films were investigated. It was found that RTA has a similar effect on the structural properties of our films as compared with furnace annealing. The conductance results showed that the effect of annealing on the interface trapped charge density (D-it) for the unhydrogenated films can be explained using the conclusion obtained from the infra-red (IR) and X-ray photoelectron spectroscopy (XPS) results. (C) 1999 Elsevier Science S.A. All rights reserved.
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页码：441 / 444
页数：4
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