Infra-red, X-ray photoelectron spectroscopy and electrical studies of r.f. sputtered amorphous silicon carbide films

被引：3
|
作者：
Han, LJ
Ong, TY
Prakash, S
Chua, LG
Choi, WK
Tan, LS
Loh, FC
Tan, KL
机构：
[1] Natl Univ Singapore, Dept Elect Engn, Microelect Lab, Singapore 119260, Singapore
[2] Natl Univ Singapore, Dept Phys, Surface Sci Lab, Singapore 119260, Singapore
来源：
THIN SOLID FILMS | 1999年 / 343卷
关键词：
annealing; FTIR; amorphous silicon carbide; sputtering; X-ray photoelectron spectroscopy;
D O I：
10.1016/S0040-6090(98)01660-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of furnace and rapid thermal annealing (RTA) on the electrical and structural properties of r.f. sputtered amorphous silicon carbide films were investigated. It was found that RTA has a similar effect on the structural properties of our films as compared with furnace annealing. The conductance results showed that the effect of annealing on the interface trapped charge density (D-it) for the unhydrogenated films can be explained using the conclusion obtained from the infra-red (IR) and X-ray photoelectron spectroscopy (XPS) results. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：441 / 444
页数：4
相关论文
共 50 条
  • [21] X-ray photoelectron spectroscopy investigation of boron carbide films deposited by sputtering
    Jacobsohn, LG
    Schulze, RK
    da Costa, MEHM
    Nastasi, M
    SURFACE SCIENCE, 2004, 572 (2-3) : 418 - 424
  • [22] Characterization of silicon oxynitride thin films by x-ray photoelectron spectroscopy
    Shallenberger, JR
    Cole, DA
    Novak, SW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (04): : 1086 - 1090
  • [23] Development of R.F. Sputtered Cu / Si Multilayer Coatings for X-Ray Mirror Applications
    D. Bhattacharyya
    N. C. Das
    A. P. Roy
    R. Chitra
    S. Basu
    Journal of Optics, 1999, 28 (1) : 1 - 13
  • [24] Development of R.F. Sputtered Cu / Si Multilayer Coatings for X-Ray Mirror Applications
    Bhattacharyya, D.
    Das, N.C.
    Roy, A.P.
    Chitra, R.
    Basu, S.
    Journal of Optics (India), 1999, 28 (01):
  • [25] X-ray photoelectron spectroscopy characterization of amorphous and nanosized thin carbon films
    Avramova, I.
    Dikovska, A.
    Valcheva, E.
    Terziiska, P.
    Mladenoff, J.
    Tzonev, L.
    Kolev, S.
    Milenov, T.
    20TH INTERNATIONAL CONFERENCE AND SCHOOL ON QUANTUM ELECTRONICS: LASER PHYSICS AND APPLICATIONS, 2019, 11047
  • [26] Binding energies of amorphous CN and SIGN films on X-ray photoelectron spectroscopy
    Yamamoto, K
    Koga, Y
    Fujiwara, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (2A): : L123 - L126
  • [27] X-RAY PHOTOELECTRON-SPECTROSCOPY OF THERMALLY GROWN SILICON DIOXIDE FILMS ON SILICON
    HOLLINGER, G
    JUGNET, Y
    PERTOSA, P
    DUC, TM
    CHEMICAL PHYSICS LETTERS, 1975, 36 (04) : 441 - 445
  • [28] X-ray diffraction spectroscopy and X-ray photoelectron spectroscopy studies of Cu-doped ZnO films
    Xue, H.
    Chen, Y.
    Xu, X. L.
    Zhang, G. H.
    Zhang, H.
    Ma, S. Y.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2009, 41 (05): : 788 - 791
  • [29] Angle-resolved X-ray photoelectron spectroscopy study of the oxides on Nb surfaces for superconducting r.f. cavity applications
    Ma, Q
    Rosenberg, RA
    APPLIED SURFACE SCIENCE, 2003, 206 (1-4) : 209 - 217
  • [30] A systematic study to investigate the effects of x-ray exposure on electrical properties of silicon dioxide thin films using x-ray photoelectron spectroscopy
    Munoz, Carlos
    Iken, Thomas
    Oncel, Nuri
    JOURNAL OF CHEMICAL PHYSICS, 2023, 159 (16):
12345