Electronic structure of RCoxGe2 (R=Ce, Pr, Gd) compounds

被引:3
|
作者
Penc, B
Szytula, A [1 ]
Wawrzynska, E
Winiarski, A
机构
[1] Jagiellonian Univ, M Smoluchowski Inst Phys, Reymonta 4, PL-30059 Krakow, Poland
[2] Univ Silesia, A Chelkowski Inst Phys, PL-40007 Katowice, Poland
关键词
D O I
10.1002/pssc.200562432
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic structure of the RCoxGe2 (R=Ce, Pr, Gd) compounds with the orthorhombic crystal structure of CeNiSi2-type was studied by X-ray photoemission spectroscopy. The valence bands of CeCo0.86Ge2 and PrCo0.85Ge2 compounds have the similar character. Near the Fermi level the broad peak corresponding to the Co 3d and R 4f and 5d6s states is observed. In the case of GdCo0.64Ge2, the strong intensity peak at 8.7 eV corresponding to Gd 4f states is observed. The analysis of the XPS spectra of Cc and Pr 3d(5/2) and 3d(3/2) in the Gunnarson-Schonhammer model give the information on the hybridization of the f orbital with the conduction band. The hybridization energy equal 93 eV for R=Ce and 143 eV for R=Pr, respectively indicate stability of the shell in these compounds.
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页码:166 / +
页数:2
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