Assisted cubic to hexagonal phase transition in GeSbTe thin films on silicon nitride

被引：4
|
作者：
Cil, K. [1 ]
Zhu, Y. [2 ]
Li, J. [2 ]
Lam, C. H. [2 ]
Silva, H. [1 ]
机构：
[1] Univ Connecticut, Storrs, CT 06269 USA
[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源：
THIN SOLID FILMS | 2013年 / 536卷
基金：
美国国家科学基金会;
关键词：
Phase change memory; Germanium-antimony-tellurium; Phase transition temperature; Face-centered cubic; Hexagonal close-packed; Substrate dependence; Silicon nitride; Silicon dioxide; CRYSTALLIZATION;
D O I：
10.1016/j.tsf.2013.03.087
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The amorphous to face-centered cubic (fcc) and fcc to hexagonal close-packed (hcp) crystallization temperatures of GeSbTe thin films on underlying silicon nitride and silicon dioxide films were studied through slow(1 K/min) resistance versus temperature measurements. The amorphous to fcc phase transition is observed at similar to 170 degrees C for both cases but the fcc to hcp phase transition temperature for GeSbTe films on silicon nitride is observed to be similar to 80 degrees C lower than for GeSbTe films on silicon dioxide, possibly due to the hexagonal symmetry of silicon nitride. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：216 / 219
页数：4
相关论文
共 50 条
  • [31] Nucleation of cubic boron nitride thin films
    Collazo-Davila, C
    Bengu, E
    Marks, LD
    Kirk, M
    DIAMOND AND RELATED MATERIALS, 1999, 8 (06) : 1091 - 1100
  • [32] PHASE-CONTROL OF CUBIC BORON-NITRIDE THIN-FILMS
    KESTER, DJ
    MESSIER, R
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (02) : 504 - 513
  • [33] Increase in Adhesion Strength and Thickness of Cubic Boron Nitride Thin Films by Silicon Addition
    Ohori, Tetsutaro
    Shirahata, Jun
    Asami, Hiroki
    Suzuki, Tsuneo
    Nakayama, Tadachika
    Suematsu, Hisayuki
    Niihara, Koichi
    JOURNAL OF THE JAPAN INSTITUTE OF METALS, 2010, 74 (01) : 36 - 41
  • [34] Isothermal phase transformation kinetics in stoichiometric GeSbTe thin films
    Laine, B
    Rivera-Rodrígues, C
    Morales-Sánchez, E
    Prokhorov, E
    Trapaga, G
    González-Hernández, J
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 345 : 173 - 177
  • [35] Monoclinic phase of boron nitride appearing during the hexagonal cubic phase transition at high pressure and high temperature
    Horiuchi, S
    He, LL
    Onoda, M
    Akaishi, M
    APPLIED PHYSICS LETTERS, 1996, 68 (02) : 182 - 184
  • [36] Chemical and structural arrangement of the trigonal phase in GeSbTe thin films
    Mio, Antonio M.
    Privitera, Stefania M. S.
    Bragaglia, Valeria
    Arciprete, Fabrizio
    Bongiorno, Corrado
    Calarco, Raffaella
    Rimini, Emanuele
    NANOTECHNOLOGY, 2017, 28 (06)
  • [37] Study of Phase Transition from Cubic to Hexagonal in the CdS Thin Films by using High Resolution XRD with 4 Axis Cradle
    Kim, Maengjun
    Kim, Hongtak
    Lee, Sungho
    Sohn, Sangho
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2012, 564 : 162 - 168
  • [38] The equilibrium phase boundary between hexagonal and cubic boron nitride
    Fukunaga, O
    DIAMOND AND RELATED MATERIALS, 2000, 9 (01) : 7 - 12
  • [39] HOT FILAMENT ASSISTED DEPOSITION OF SILICON-NITRIDE THIN-FILMS
    DESHPANDE, SV
    DUPUIE, JL
    GULARI, E
    APPLIED PHYSICS LETTERS, 1992, 61 (12) : 1420 - 1422
  • [40] Synthesis of hexagonal boron nitride thin films by a plasma assisted chemical vapor deposition method
    Thévenin, P
    Soltani, A
    Bath, A
    JOURNAL DE PHYSIQUE IV, 2001, 11 (PR3): : 803 - 810
12345