Assisted cubic to hexagonal phase transition in GeSbTe thin films on silicon nitride

被引：4
作者：
Cil, K. [1 ]
Zhu, Y. [2 ]
Li, J. [2 ]
Lam, C. H. [2 ]
Silva, H. [1 ]
机构：
[1] Univ Connecticut, Storrs, CT 06269 USA
[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源：
THIN SOLID FILMS | 2013年 / 536卷
基金：
美国国家科学基金会;
关键词：
Phase change memory; Germanium-antimony-tellurium; Phase transition temperature; Face-centered cubic; Hexagonal close-packed; Substrate dependence; Silicon nitride; Silicon dioxide; CRYSTALLIZATION;
D O I：
10.1016/j.tsf.2013.03.087
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The amorphous to face-centered cubic (fcc) and fcc to hexagonal close-packed (hcp) crystallization temperatures of GeSbTe thin films on underlying silicon nitride and silicon dioxide films were studied through slow(1 K/min) resistance versus temperature measurements. The amorphous to fcc phase transition is observed at similar to 170 degrees C for both cases but the fcc to hcp phase transition temperature for GeSbTe films on silicon nitride is observed to be similar to 80 degrees C lower than for GeSbTe films on silicon dioxide, possibly due to the hexagonal symmetry of silicon nitride. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：216 / 219
页数：4
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