Asymmetric Spin-Orbit-Torque-Induced Magnetization Switching With a Noncollinear In-Plane Assisting Magnetic Field

被引:27
作者
Fan, Weijia [1 ,2 ]
Zhao, Jie [1 ,2 ]
Tang, Meng [1 ,2 ]
Chen, Huanjian [1 ,2 ]
Yang, Huanglin [1 ,2 ]
Lu, Weiming [3 ,4 ]
Shi, Zhong [1 ,2 ]
Qiu, Xuepeng [1 ,2 ]
机构
[1] Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China
[2] Tongji Univ, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China
[3] Univ Jinan, Spintron Inst, Jinan 250022, Shandong, Peoples R China
[4] Harbin Inst Technol, Condensed Matter Sci & Technol Inst, Sch Sci, Harbin 150081, Heilongjiang, Peoples R China
基金
国家重点研发计划; 美国国家科学基金会; 上海市自然科学基金;
关键词
DYNAMICS; DRIVEN;
D O I
10.1103/PhysRevApplied.11.034018
中图分类号
O59 [应用物理学];
学科分类号
摘要
The behaviors of spin-orbit-torque-(SOT) induced magnetization switching under an in-plane assisting magnetic field with varied directions are investigated in heavy metal (Pt, Ta)/Co40Fe40B20/MgO perpendicularly magnetized multilayers. When the assisting field direction is not collinear with that of the electric current, asymmetric SOT-induced switching between up-to-down and down-to-up magnetized states is observed and this is more prominent for the Ta sample. Such asymmetry is attributed to the transverse SOT effective field H-T, which is -566 (278) Oe per 10(8) A/cm(2) for the Ta (Pt) sample as characterized by the harmonic Hall voltage measurements. The atomistic simulations using the Landau-Lifshitz-Gilbert equation with inclusion of the SOT terms adequately explain the asymmetric SOT switching. By exploring the SOT-induced magnetization switching in more general scenarios with arbitrary direction of the in-plane assisting field, our results have important implications for optimizing the functionality and efficiency of SOT devices.
引用
收藏
页数:7
相关论文
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