Enhanced output power of GaN-based LEDs with nano-patterned sapphire substrates

被引：79

作者：

Chen, J. J. ^{[1
,2
]}

Su, Y. K. ^{[2
]}

Lin, C. L. ^{[3
]}

Chen, S. M. ^{[3
]}

Li, W. L. ^{[2
]}

Kao, C. C. ^{[4
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

[3] Kun Shan Univ, Dept Elect Engn, Tainan 710, Taiwan

[4] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 701, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2008年 / 20卷 / 13-16期

关键词：

GaN; light-emitting diode (LED); nano-patterned sapphire substrate (NPSS); nanosphere lithography;

D O I：

10.1109/LPT.2008.924900

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN-based light-emitting diodes (LEDs) with an emitting wavelength of 450 nm were grown on nano-patterned sapphire substrates (NPSS) fabricated by nanosphere lithography. The crystalline quality of the epitaxial film could be improved by using the NPSS technique. The output power of LED grown on NPSS was 1.3 and 1.11 times higher than those of LEDs grown on conventional and patterned sapphire substrates at the injection current of 20 mA, respectively. The enhancement in output power could be contributed to the efficiently scattering by NPSS. But some voids formed at the GaN/NPSS interface cause a thermal dissipation problem of NPSS LED operated at high injection current.

引用

页码：1193 / 1195

页数：3

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