Radiation-induced effects in GaN by photoconductivity analysis

被引：10
作者：
Castaldini, A [1 ]
Cavallini, A [1 ]
Polenta, L [1 ]
机构：
[1] Univ Bologna, Dept Phys, I-40127 Bologna, Italy
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 15期
关键词：
D O I：
10.1002/pssa.200521110
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Spectral photoconductivity is a very efficient tool to explore the forbidden gap of wide gap semiconductors, detecting band-to-band or deep level-to-band transitions of the charge carriers. In this paper we present some results obtained by spectral photoconductivity concerning FWPE (bydride vapour phase epitaxy) grown gallium nitride submitted to high energy proton irradiation. The behaviour of the material before and after irradiation may give information on the characteristics of the deep bands and their association to surface or bulk defects. In particular we observed how irradiation quenches the yellow band and correspondingly inhibits persistent photocurrent effects. Persistent photocurrent measurements carried out at different temperatures give further insights on the radiation-induced effects. The possible correlation among the deep-related transitions and the persistent photo-effects is here proposed. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
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页码：2912 / 2919
页数：8
相关论文
共 33 条
[1]  
[Anonymous], 1997, BLUE LASER DIODE GAN, DOI DOI 10.1007/978-3-662-03462-0
[2]  
Bube R. H., 1960, PHOTOCONDUCTIVITY SO, P461
[3]   Yellow and green bands in GaN by resolved spectral photoconductivity [J].
Castaldini, A ;
Cavallini, A ;
Polenta, L .
APPLIED PHYSICS LETTERS, 2005, 87 (12) :1-3
[4]   Electrical and optical characterization of GaN HVPE layers related to extended defects [J].
Castaldini, A ;
Cavallini, A ;
Polenta, L ;
Díaz-Guerra, C ;
Piqueras, J .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (48) :13095-13104
[5]  
Castaldini A, 2000, SOLID STATE PHENOMEN, V78-79, P95
[6]   THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].
CHADI, DJ ;
CHANG, KJ .
PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876
[7]   Structural and optical properties of thick freestanding GaN templates [J].
Freitas, JA ;
Braga, GCB ;
Moore, WJ ;
Tischler, JG ;
Culbertson, JC ;
Fatemi, M ;
Park, SS ;
Lee, SK ;
Park, Y .
JOURNAL OF CRYSTAL GROWTH, 2001, 231 (03) :322-328
[8]   Carrier and defect dynamics in photoexcited semi-insulating epitaxial GaN layers [J].
Gaubas, E ;
Jursenas, S ;
Miasojedovas, S ;
Vaitkus, J ;
Zukauskas, A .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (08) :4326-4333
[9]   OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION [J].
GLASER, ER ;
KENNEDY, TA ;
DOVERSPIKE, K ;
ROWLAND, LB ;
GASKILL, DK ;
FREITAS, JA ;
KHAN, MA ;
OLSON, DT ;
KUZNIA, JN ;
WICKENDEN, DK .
PHYSICAL REVIEW B, 1995, 51 (19) :13326-13336
[10]   Persistent photoconductivity in n-type GaN [J].
Hirsch, MT ;
Wolk, JA ;
Walukiewicz, W ;
Haller, EE .
APPLIED PHYSICS LETTERS, 1997, 71 (08) :1098-1100
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