Electrical conductivity, ESR and Raman scattering spectroscopy of undoped and B-doped diamond films grown by CVD method

被引：0

作者：

Bala, W ^{[1
]}

Rozploch, F ^{[1
]}

Falkowski, L ^{[1
]}

Kulesza, S ^{[1
]}

Zabik, G ^{[1
]}

Plachetko, S ^{[1
]}

Borowski, P ^{[1
]}

机构：

[1] Nicholas Copernicus Univ, Inst Phys, PL-87100 Torun, Poland

来源：

EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY | 1999年 / 3725卷

关键词：

diamond layers; Raman spectra; ESR spectra; thermally stimulated current;

D O I：

10.1117/12.344723

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electrical conductivity, thermally stimulated depolarization current as well as the current-voltage characteristics were measured from 77 K to 350 K. The obtained results are correlated with the Raman scattering spectroscopy and ESR spectra. In Al-Si-diamond layer-Al structures three (for B-doped diamond layers) or two (for no B-doped diamond layers) TSC peaks in the temperature range between 100 and 300 K are observed. They correspond to trap levels with a thermal activation energy of 0.03-0.06 eV, 0.13-0.18 eV and 0.6-0.65 eV.

引用

页码：151 / 156

页数：6