Electrical conductivity, ESR and Raman scattering spectroscopy of undoped and B-doped diamond films grown by CVD method

被引：0
|
作者：
Bala, W [1 ]
Rozploch, F [1 ]
Falkowski, L [1 ]
Kulesza, S [1 ]
Zabik, G [1 ]
Plachetko, S [1 ]
Borowski, P [1 ]
机构：
[1] Nicholas Copernicus Univ, Inst Phys, PL-87100 Torun, Poland
来源：
EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY | 1999年 / 3725卷
关键词：
diamond layers; Raman spectra; ESR spectra; thermally stimulated current;
D O I：
10.1117/12.344723
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The electrical conductivity, thermally stimulated depolarization current as well as the current-voltage characteristics were measured from 77 K to 350 K. The obtained results are correlated with the Raman scattering spectroscopy and ESR spectra. In Al-Si-diamond layer-Al structures three (for B-doped diamond layers) or two (for no B-doped diamond layers) TSC peaks in the temperature range between 100 and 300 K are observed. They correspond to trap levels with a thermal activation energy of 0.03-0.06 eV, 0.13-0.18 eV and 0.6-0.65 eV.
引用
收藏
页码：151 / 156
页数：6
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