In assisted realization of p-type C-doped ZnO: A first-principles study

被引：17
作者：
Yao, G. Y. [1 ]
Fan, G. H. [1 ]
Zhao, F. [1 ]
Ma, J. H. [1 ]
Chen, J. [1 ]
Zheng, S. W. [1 ]
Zeng, S. M. [1 ]
He, L. F. [1 ]
Zhang, T. [1 ]
机构：
[1] S China Normal Univ, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 2012年 / 407卷 / 17期
基金：
中国国家自然科学基金;
关键词：
First-principles; ZnO; Impurities in semiconductors; Electronic structure; THIN-FILMS; CONDUCTION; GA;
D O I：
10.1016/j.physb.2012.05.019
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
C mono-doped and C-In co-doped ZnO are investigated by the first-principles calculations. It is found that the C mono-doped ZnO is p-type with hole carriers locating nearby valence band maximum. Furthermore, a shallower C acceptor energy level appears in the band gap after incorporating In into C-doped ZnO system. Meantime, compared with C mono-doped ZnO, C-In co-doped ZnO has a lower formation energy, correspondingly a higher chemical stability, and thus to enhance the incorporation efficiency of C. These results suggest that C-In co-doping method provided an efficient technique for realizing p-type ZnO. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：3539 / 3542
页数：4
相关论文
共 38 条
  • [1] Realization of p-type ZnO by (nN, Mg) codoping from first-principles
    Chen, Lanli
    Xiong, Zhihua
    Wan, Qixin
    Li, Dongmei
    [J]. OPTICAL MATERIALS, 2010, 32 (09) : 1216 - 1222
  • [2] p-type behavior in In-N codoped ZnO thin films -: art. no. 252106
    Chen, LL
    Lu, JG
    Ye, ZZ
    Lin, YM
    Zhao, BH
    Ye, YM
    Li, JS
    Zhu, LP
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (25) : 1 - 3
  • [3] Role of embedded clustering in dilute magnetic semiconductors: Cr doped GaN
    Cui, XY
    Medvedeva, JE
    Delley, B
    Freeman, AJ
    Newman, N
    Stampfl, C
    [J]. PHYSICAL REVIEW LETTERS, 2005, 95 (25)
  • [4] Local structure of condensed zinc oxide -: art. no. 104101
    Decremps, F
    Datchi, F
    Saitta, AM
    Polian, A
    Pascarelli, S
    Di Cicco, A
    Itié, JP
    Baudelet, F
    [J]. PHYSICAL REVIEW B, 2003, 68 (10)
  • [5] SELF-ENERGY OPERATORS AND EXCHANGE-CORRELATION POTENTIALS IN SEMICONDUCTORS
    GODBY, RW
    SCHLUTER, M
    SHAM, LJ
    [J]. PHYSICAL REVIEW B, 1988, 37 (17): : 10159 - 10175
  • [6] Stable ferromagnetism in p-type carbon-doped ZnO nanoneedles
    Herng, T. S.
    Lau, S. P.
    Wei, C. S.
    Wang, L.
    Zhao, B. C.
    Tanemura, M.
    Akaike, Y.
    [J]. APPLIED PHYSICS LETTERS, 2009, 95 (13)
  • [7] Magnetotransport properties of p-type carbon-doped ZnO thin films
    Herng, T. S.
    Lau, S. P.
    Wang, L.
    Zhao, B. C.
    Yu, S. F.
    Tanemura, M.
    Akaike, A.
    Teng, K. S.
    [J]. APPLIED PHYSICS LETTERS, 2009, 95 (01)
  • [8] Room-temperature ultraviolet nanowire nanolasers
    Huang, MH
    Mao, S
    Feick, H
    Yan, HQ
    Wu, YY
    Kind, H
    Weber, E
    Russo, R
    Yang, PD
    [J]. SCIENCE, 2001, 292 (5523) : 1897 - 1899
  • [9] LDA and GGA calculations for high-pressure phase transitions in ZnO and MgO
    Jaffe, JE
    Snyder, JA
    Lin, ZJ
    Hess, AC
    [J]. PHYSICAL REVIEW B, 2000, 62 (03): : 1660 - 1665
  • [10] p-type electrical conduction in ZnO thin films by Ga and N codoping
    Joseph, M
    Tabata, H
    Kawai, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (11A): : L1205 - L1207
1234