Structural and vibrational properties of PVT grown Bi2Te3 microcrystals

被引:44
作者
Atuchin, V. V. [1 ]
Gavrilova, T. A. [2 ]
Kokh, K. A. [3 ]
Kuratieva, N. V. [4 ]
Pervukhina, N. V. [4 ]
Surovtsev, N. V. [5 ]
机构
[1] SB RAS, Lab Opt Mat & Struct, Inst Semicond Phys, Novosibirsk 630090 90, Russia
[2] SB RAS, Lab Nanodiagnost & Nanolithog, Inst Semicond Phys, Novosibirsk 630090, Russia
[3] SB RAS, Lab Crystal Growth, Inst Geol & Mineral, Novosibirsk 630090, Russia
[4] SB RAS, Lab Crystal Chem, Inst Inorgan Chem, Novosibirsk 630090, Russia
[5] SB RAS, Lab Condensed Matter Spect, Inst Automat & Electrometry, Novosibirsk 630090 90, Russia
关键词
Topological insulator; PVT crystal growth; Crystal structure; Raman spectroscopy; TOPOLOGICAL INSULATOR; THERMOELECTRIC PROPERTIES; ULTRATHIN FILMS; BISMUTH; OPTIMIZATION; TRANSPORT; SURFACE;
D O I
10.1016/j.ssc.2012.04.007
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
High-quality Bi2Te3 microcrystals have been grown by physical vapor transport (PVT) method without using a foreign transport agent. The microcrystals grown under optimal temperature gradient are well facetted and they have dimensions up to similar to 100 mu m. The phase composition of grown crystals has been identified by X-ray single crystal structure analysis in space group R (3) over barm, a=4.3896(2) angstrom, b=30.5019(10) angstrom, Z=3 (R=0.0271). Raman microspectrometry has been used to describe the vibration parameters of Bi2Te3 microcrystals. The FWHM parameters obtained for representative Raman lines at 61 cm(-1) and 101 cm(-1) are as low as 3.5 cm(-1) and 4.5 cm(-1), respectively. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1119 / 1122
页数:4
相关论文
共 45 条
[1]   Rietveld refinement of the semiconducting system Bi2-xFexTe3 from X-ray powder diffraction [J].
Adam, Alia .
MATERIALS RESEARCH BULLETIN, 2007, 42 (12) :1986-1994
[2]  
[Anonymous], 2004, J APPL CRYSTALLOGR, DOI DOI 10.1107/S0021889804015456
[3]   Formation of Inert Bi2Se3(0001) Cleaved Surface [J].
Atuchin, V. V. ;
Golyashov, V. A. ;
Kokh, K. A. ;
Korolkov, I. V. ;
Kozhukhov, A. S. ;
Kruchinin, V. N. ;
Makarenko, S. V. ;
Pokrovsky, L. D. ;
Prosvirin, I. P. ;
Romanyuk, K. N. ;
Tereshchenko, O. E. .
CRYSTAL GROWTH & DESIGN, 2011, 11 (12) :5507-5514
[4]   Sublimation growth and vibrational microspectrometry of α-MoO3 single crystals [J].
Atuchin, V. V. ;
Gavrilova, T. A. ;
Grigorieva, T. I. ;
Kuratieva, N. V. ;
Okotrub, K. A. ;
Pervukhina, N. V. ;
Surovtsev, N. V. .
JOURNAL OF CRYSTAL GROWTH, 2011, 318 (01) :987-990
[5]   EFFECTS OF DOPING ADDITIONS ON THERMOELECTRIC PROPERTIES OF INTRINSIC SEMICONDUCTOR BI2TE21SE09 [J].
BENNETT, LC ;
WIESE, JR .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (04) :562-&
[6]  
Bruker AXS Inc, 2004, APEX2 (Version 1.08), SAINT (Version 07.03), SADABS (Version 02.11), SHELXTL (Version 06.12)
[7]   SIR2004:: an improved tool for crystal structure determination and refinement [J].
Burla, MC ;
Caliandro, R ;
Camalli, M ;
Carrozzini, B ;
Cascarano, GL ;
De Caro, L ;
Giacovazzo, C ;
Polidori, G ;
Spagna, R .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2005, 38 :381-388
[8]   Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3 [J].
Chen, Y. L. ;
Analytis, J. G. ;
Chu, J. -H. ;
Liu, Z. K. ;
Mo, S. -K. ;
Qi, X. L. ;
Zhang, H. J. ;
Lu, D. H. ;
Dai, X. ;
Fang, Z. ;
Zhang, S. C. ;
Fisher, I. R. ;
Hussain, Z. ;
Shen, Z. -X. .
SCIENCE, 2009, 325 (5937) :178-181
[9]   Template-free Synthesis and Transport Properties of Bi2Te3 Ordered Nanowire Arrays via a Physical Vapor Process [J].
Deng, Yuan ;
Xiang, Yan ;
Song, Yuanzeng .
CRYSTAL GROWTH & DESIGN, 2009, 9 (07) :3079-3082
[10]   Growth of ZnSe single crystals [J].
Fang, CS ;
Gu, QT ;
Wei, JQ ;
Pan, QW ;
Shi, W ;
Wang, JY .
JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) :542-546