Effect of Ionizing Radiation and Temperature on SiGe HBT

被引：0
|
作者：
Verma, Yogesh Kumar [1 ]
Mishra, Varun [1 ]
Verma, Prateek Kishor [1 ]
Gupta, Santosh Kumar [1 ]
Chauhan, Rajeev Kumar [2 ]
机构：
[1] Motilal Nehru Natl Inst Technol, Elect & Commun Engn Dept, Allahabad, Uttar Pradesh, India
[2] Madan Mohan Malaviya Univ Technol, Elect & Commun Engn Dept, Gorakhpur, Uttar Pradesh, India
来源：
2018 5TH IEEE UTTAR PRADESH SECTION INTERNATIONAL CONFERENCE ON ELECTRICAL, ELECTRONICS AND COMPUTER ENGINEERING (UPCON) | 2018年
关键词：
SiGe; HBT; radiation; temperature; BiCMOS;
D O I：
暂无
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
In this brief, a thorough investigation is performed to analyze the effect of ionizing radiation and temperature on SiGe HBT. The effect of 1 Mrad (Si) gamma total dose is analyzed on device performance parameters: base transit time, cut-off frequency, and maximum oscillation frequency. Also, the effects of both intrinsic and extrinsic reliability issues i.e., radiation rich environment, temperature, and self heating are analyzed on SiGe HBT and SiGe BiCMOS HBT using TCAD.
引用
收藏
页码：243 / 248
页数：6
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