Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors

被引：11

作者：

Wong, Yuen-Yee ^{[1
]}

Chen, Yu-Kong ^{[2
]}

Maa, Jer-Shen ^{[2
]}

Yu, Hung-Wei ^{[1
]}

Tu, Yung-Yi ^{[1
]}

Dee, Chang-Fu ^{[3
]}

Yap, Chi-Chin ^{[4
]}

Chang, Edward Yi ^{[1
,5
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Lighting & Energy Photon, Tainan 71150, Taiwan

[3] Univ Kebangsaan Malaysia, Inst Microengn & Nanoelect, Bangi 43600, Selangor, Malaysia

[4] Univ Kebangsaan Malaysia, Fac Sci & Technol, Sch Appl Phys, Bangi 43600, Selangor, Malaysia

[5] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 15期

关键词：

N-TYPE GAN; HETEROSTRUCTURE; MICROSTRUCTURE; TI/AL; HEMT;

D O I：

10.1063/1.4824894

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ti/Al/Ni/Cu ohmic contact for AlGaN/GaN structure has been fabricated. The Ni layer played an important role in achieving low specific contact resistance (r(c)), smooth morphology, and excellent edge acuity. With a 50-angstrom Ni layer, a r(c) of 1.35 x 10(-6) Omega-cm(2) and a root-mean-square roughness of 7.65 nm have been realized. The characterization results indicated that no evidence of Cu diffusion into the semiconductor layers. The formation of Al-Cu and Ti-Cu alloys might have confined the Cu within the ohmic metal. In the absence of gold, the surface roughening caused by Au-Al alloy in conventional Ti/Al/Ni/Au structure was also prevented. (C) 2013 AIP Publishing LLC.

引用

页数：4

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