A Roadmap for Controlled Production of Topological Insulator Nanostructures and Thin Films

被引:44
作者
Guo, Yunfan [1 ]
Liu, Zhongfan [1 ]
Peng, Hailin [1 ]
机构
[1] Peking Univ, Beijing Natl Lab Mol Sci, State Key Lab Struct Chem Unstable & Stable Speci, Ctr Nanochem,Coll Chem & Mol Engn, Beijing 100871, Peoples R China
基金
中国国家自然科学基金;
关键词
topological insulators; nanostructures; synthesis; surface states; bulk carriers; DER-WAALS EPITAXY; BISMUTH TELLURIDE; CHEMICAL INTERCALATION; BI2SE3; NANORIBBONS; SURFACE CONDUCTION; GROWTH; BI2TE3; GRAPHENE; OSCILLATIONS; EXFOLIATION;
D O I
10.1002/smll.201403426
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The group V-VI chalcogenide semiconductors (Bi2Se3, Bi2Te3, and Sb2Te3) have long been known as thermoelectric materials. Recently, they have been once more generating interest because Bi2Se3, Bi2Te3 and Sb2Te3 have been crowned as 3D topological insulators (TIs), which have insulating bulk gaps and metallic Dirac surface states. One big challenge in the study of TIs is the lack of high-quality materials with few defects and insulating bulk states. To manifest the topological surface states, it is critical to suppress the contribution from the bulk carriers. Controlled production of TI nanostructures that have a large surface-to-volume ratio is an efficient way to reduce the bulk conductance and to significantly enhance the topological surface conduction. In this review article, the recent progress on the preparation of TI nanostructures is highlighted. Basic production methods for TI nanostructures are introduced in detail. Furthermore, several specific production approaches to reduce the residual bulk carriers from defects are summarized. Finally, the progress and the prospects of the production of TI-based heterostructures, which hold promise in both fundamental study and novel applications are discussed.
引用
收藏
页码:3290 / 3305
页数:16
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