Modelization of epitaxial GaAs X-ray detectors

被引：4

作者：

Mañez, N

Sun, GC

Ben Choulkha, M

Algani, C

Alquié, G

Verdeil, C

Talbi, N

Khirouni, K

Bourgoin, JC

机构：

[1] Univ Paris 06, GESEC R&D, F-75015 Paris, France

[2] Univ Paris 06, LISIF, F-94200 Ivry, France

[3] Univ Gabes, Fac Sci, Gabes 6029, Tunisia

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2006年 / 90卷 / 10期

关键词：

X-ray detectors; GaAs; epitaxy; space charge region;

D O I：

10.1016/j.solmat.2005.10.014

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

X-ray detectors are fabricated with non-intentionally doped thick epitaxial GaAs layers grown by a chemical technique. They are p(+)/l/n(+) structures in which the highly doped p- and n-type layers are made by ion implantation on both faces of the i epilayers. In order to understand the behaviour of charge collection, we modelize the capacitance-voltage characteristics of such structures, which are then compared with experimental data. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：1498 / 1503

页数：6

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