Azafullerene (C59N)2 thin-film field-effect transistors

被引：15

作者：

Kumashiro, R ^{[1
]}

Tanigaki, K

Ohashi, H

Tagmatarchis, N

Kato, H

Shinohara, H

Akasaka, T

Kato, K

Aoyagi, S

Kimura, S

Takata, M

机构：

[1] Japan Sci & Technol Corp, CREST, Kawaguchi, Japan

[2] Osaka City Univ, Grad Sch Sci, Osaka 558, Japan

[3] Univ Trieste, Trieste, Italy

[4] Nagoya Univ, Dept Chem, Nagoya, Aichi, Japan

[5] Univ Tsukuba, Ctr Tsukuba Adv Res Alliance, Tsukuba, Ibaraki 305, Japan

[6] SPring 8, JASRI, Sayo, Hyogo, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 12期

关键词：

D O I：

10.1063/1.1667013

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin-film field-effect transistors (FETs) of azafullerene (C59N)(2) are fabricated, and their properties are investigated. The (C59N)(2) FET exhibits n-channel characteristics with the field-effect electron mobility of 3.8x10(-4) cm(2) V-1 s(-1) and the on-off current ratio of 10(3) at room temperature. The observed differences are ascribed to the much smaller grain size and the worse crystallinity of (C59N)(2) thin films, on a basis of low angle x-ray diffraction structural data. The anticipated dimer to monomer conversion with electron carrier injection is not observed. The FET characteristics are discussed from the temperature evolution of the mobilities between (C59N)(2) and C-60 FETs. (C) 2004 American Institute of Physics.

引用

页码：2154 / 2156

页数：3

共 20 条

[1] Unconventional bonding of azafullerenes: Theory and experiment [J].