We first report the degradation mode of a spot-size converted (SSC) laser. We succeed in suppressing a buried heterointerface degradation with a combination of MOVPE growth and dry etching techniques (2-inch wafer process). The far-field patterns and wide-temperature operation required for low-cost system application scarcely change during degradation, and the device life is beyond 10(5) hours at 60 degrees C, 10 mW.