Characterization and Application of Next-Generation SiC Power Devices for High-Frequency Isolated Bidirectional DC-DC Converter

被引：0
|
作者：
Zhao, Biao [1 ]
Song, Qiang [1 ]
Liu, Wenhua [1 ]
Sun, Yandong [1 ]
机构：
[1] Tsinghua Univ, Beijing 100084, Peoples R China
来源：
38TH ANNUAL CONFERENCE ON IEEE INDUSTRIAL ELECTRONICS SOCIETY (IECON 2012) | 2012年
关键词：
DESIGN;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, the application performance characteristics of high-frequency isolated bidirectional DC-DC converter (IBDC) based on SiC-DMOS and SiC-SBD samples provided by ROHM SEMICONDUCTOR Inc. are analyzed. The paper gave the basic design procedure of SiC-based converter, and established the mathematical model of power losses by analyzing the switching characteristic of the converter. On this basis, the power loss and efficiency characteristics of the SiC-based converter were analyzed and the related experimental results were presented. Theoretical analysis and experimental results show that the SiC-based converter has better performance than the Si-based converter; it will have a wide application prospect in the future smart electricity network.
引用
收藏
页码：281 / 286
页数：6
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