Characterization and Application of Next-Generation SiC Power Devices for High-Frequency Isolated Bidirectional DC-DC Converter

被引：0

作者：

Zhao, Biao ^{[1
]}

Song, Qiang ^{[1
]}

Liu, Wenhua ^{[1
]}

Sun, Yandong ^{[1
]}

机构：

[1] Tsinghua Univ, Beijing 100084, Peoples R China

来源：

38TH ANNUAL CONFERENCE ON IEEE INDUSTRIAL ELECTRONICS SOCIETY (IECON 2012) | 2012年

关键词：

DESIGN;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, the application performance characteristics of high-frequency isolated bidirectional DC-DC converter (IBDC) based on SiC-DMOS and SiC-SBD samples provided by ROHM SEMICONDUCTOR Inc. are analyzed. The paper gave the basic design procedure of SiC-based converter, and established the mathematical model of power losses by analyzing the switching characteristic of the converter. On this basis, the power loss and efficiency characteristics of the SiC-based converter were analyzed and the related experimental results were presented. Theoretical analysis and experimental results show that the SiC-based converter has better performance than the Si-based converter; it will have a wide application prospect in the future smart electricity network.

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页码：281 / 286

页数：6

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