Eu3+ reduction and efficient light emission in Eu2O3 films deposited on Si substrates

被引：27

作者：

Bellocchi, Gabriele ^{[1
,2
]}

Franzo, Giorgia ^{[1
]}

Iacona, Fabio ^{[1
]}

Boninelli, Simona ^{[1
]}

Miritello, Maria ^{[1
]}

Cesca, Tiziana ^{[3
,4
]}

Priolo, Francesco ^{[1
,2
]}

机构：

[1] MATIS CNR IMM, I-95123 Catania, Italy

[2] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy

[3] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy

[4] CNISM, I-35131 Padua, Italy

来源：

OPTICS EXPRESS | 2012年 / 20卷 / 05期

关键词：

ENERGY-TRANSFER; THIN-FILM; LUMINESCENCE;

D O I：

10.1364/OE.20.005501

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A stable Eu3+-> Eu2+ reduction is accomplished by thermal annealing in N-2 ambient of EU2O3 films deposited by magnetron sputtering on Si substrates. Transmission electron microscopy and x-ray diffraction measurements demonstrate the occurrence of a complex reactivity at the Eu2O3/Si interface, leading to the formation of Eu2+ silicates, characterized by a very strong (the measured external quantum efficiency is about 10%) and broad room temperature photoluminescence (PL) peak centered at 590 nm. This signal is much more efficient than the Eu3+ emission, mainly consisting of a sharp PL peak at 622 nm, observed in O-2-annealed films, where the presence of a SiO2 layer at the Eu2O3/Si interface prevents Eu2+ formation. (C) 2012 Optical Society of America

引用

页码：5501 / 5507

页数：7

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