Development of ferroelectric oxides based resistive switching materials

被引：6

作者：

Guan, Peiyuan ^{[1
]}

Sun, Yuandong ^{[2
]}

Wan, Tao ^{[1
]}

Lin, Xi ^{[1
]}

Xu, Zhemi ^{[1
]}

Chu, Dewei ^{[1
]}

机构：

[1] Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia

[2] Univ Akron, Dept Polymer Sci, Akron, OH 44325 USA

来源：

MATERIALS SCIENCE AND TECHNOLOGY | 2017年 / 33卷 / 17期

关键词：

Resistive switching; ferroelectric oxide; non-volatile memory; SRZRO3; THIN-FILMS; SCHOTTKY JUNCTION; PHASE-CHANGE; MEMORY; MECHANISMS; CONDUCTION; ELECTRORESISTANCE; FILAMENTARY; TRANSITION; BEHAVIOR;

D O I：

10.1080/02670836.2017.1366712

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Resistive random access memory (RRAM) is one of the most promising candidates that satisfies the requirements of new generation non-volatile memories, as a consequence of its high density, outstanding scalability, and low power consumption. The review is based on a summary of recent studies in ferroelectric oxides based resistive switching (RS) materials and devices. It highlights the various ferroelectric oxide materials with RS behaviour and the underlying mechanisms including filament-type and interface-type mechanism. In the end, the challenge in current RRAM for future high-density data storage applications is addressed.

引用

页码：2010 / 2023

页数：14

共 147 条

[61] Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode [J].

Lin, Kuan-Liang ;

Hou, Tuo-Hung ;

Lee, Yao-Jen ;

Chang, Jhe-Wei ;

Lin, Jun-Hung ;

Shieh, Jiann ;

Chou, Cheng-Tung ;

Lei, Tan-Fu ;

Chang, Wen-Hsiung ;

Jang, Wen-Yueh ;

Lin, Chen-Hsi .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (03)

[62] Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO3-Based Memory Films [J].

Lin, Meng-Han ;

Wu, Ming-Chi ;

Lin, Chen-Hsi ;

Tseng, Tseung-Yuen .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (08) :1801-1808

[63] Nonpolar Bistable Resistive Switching Behaviors of Bismuth Titanate Oxide Thin Film [J].

Lin, Meng-Han ;

Wu, Ming-Chi ;

Lin, Chun-Chieh ;

Tseng, Tseung-Yuen .

FERROELECTRICS, 2009, 380 :30-37

[64] Temperature-dependent and polarization-tuned resistive switching in Au/BiFeO3/SrRuO3 junctions [J].

Lin, Y. B. ;

Yan, Z. B. ;

Lu, X. B. ;

Lu, Z. X. ;

Zeng, M. ;

Chen, Y. ;

Gao, X. S. ;

Wan, J. G. ;

Dai, J. Y. ;

Liu, J. -M. .

APPLIED PHYSICS LETTERS, 2014, 104 (14)

[65] Bistable resistive switching of a sputter-deposited Cr-doped SrZrO3 memory film [J].

Liu, CY ;

Wu, PH ;

Wang, A ;

Jang, WY ;

Young, JC ;

Chiu, KY ;

Tseng, TY .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (06) :351-353

[66] Coexistence of unipolar and bipolar resistive switching in BiFeO3 and Bi0.8Ca0.2FeO3 films [J].

Liu, Lu ;

Zhang, Shantao ;

Luo, Ying ;

Yuan, Guoliang ;

Liu, Junming ;

Yin, Jiang ;

Liu, Zhiguo .

JOURNAL OF APPLIED PHYSICS, 2012, 111 (10)

[67] Resistive switching memory effect of ZrO2 films with Zr+ implanted [J].

Liu, Qi ;

Guan, Weihua ;

Long, Shibing ;

Jia, Rui ;

Liu, Ming ;

Chen, Junning .

APPLIED PHYSICS LETTERS, 2008, 92 (01)

[68] Electric-pulse-induced reversible resistance change effect in magnetoresistive films [J].

Liu, SQ ;

Wu, NJ ;

Ignatiev, A .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2749-2751

[69] Filament-Type Resistive Switching in Homogeneous Bi-Layer Pr0.7Ca0.3MnO3 Thin Film Memory Devices [J].

Liu, Xinjun ;

Biju, Kuyyadi P. ;

Bourim, El Mostafa ;

Park, Sangsu ;

Lee, Wootae ;

Lee, Daeseok ;

Seo, Kyungah ;

Hwang, Hyunsang .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (01) :II9-II12

[70] Structural and electric properties of SrZrO3 thin films on different Pt bottom electrodes [J].

Lu, YK ;

Chen, CH ;

Zhu, W ;

Yu, T ;

Chen, XF .

CERAMICS INTERNATIONAL, 2004, 30 (07) :1547-1551

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