Development of ferroelectric oxides based resistive switching materials

被引：6

作者：

Guan, Peiyuan ^{[1
]}

Sun, Yuandong ^{[2
]}

Wan, Tao ^{[1
]}

Lin, Xi ^{[1
]}

Xu, Zhemi ^{[1
]}

Chu, Dewei ^{[1
]}

机构：

[1] Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia

[2] Univ Akron, Dept Polymer Sci, Akron, OH 44325 USA

来源：

MATERIALS SCIENCE AND TECHNOLOGY | 2017年 / 33卷 / 17期

关键词：

Resistive switching; ferroelectric oxide; non-volatile memory; SRZRO3; THIN-FILMS; SCHOTTKY JUNCTION; PHASE-CHANGE; MEMORY; MECHANISMS; CONDUCTION; ELECTRORESISTANCE; FILAMENTARY; TRANSITION; BEHAVIOR;

D O I：

10.1080/02670836.2017.1366712

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Resistive random access memory (RRAM) is one of the most promising candidates that satisfies the requirements of new generation non-volatile memories, as a consequence of its high density, outstanding scalability, and low power consumption. The review is based on a summary of recent studies in ferroelectric oxides based resistive switching (RS) materials and devices. It highlights the various ferroelectric oxide materials with RS behaviour and the underlying mechanisms including filament-type and interface-type mechanism. In the end, the challenge in current RRAM for future high-density data storage applications is addressed.

引用

页码：2010 / 2023

页数：14

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