Modeling semiconductor amplifiers and lasers: from microscopic physics to device simulation

被引：21
作者：
Moloney, JV [1 ]
Indik, RA
Hader, J
Koch, SW
机构：
[1] Univ Arizona, Dept Math, Arizona Ctr Math Sci, Tucson, AZ 85721 USA
[2] Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany
来源：
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 1999年 / 16卷 / 11期
关键词：
D O I：
10.1364/JOSAB.16.002023
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We combine the results of full many-body band-structure calculations of the semiconductor optical response and a full space-time-resolved laser propagation model. Two quantum-well structures are chosen, one showing a sharp increase of the linewidth enhancement factor with density; the other, a clamping of this factor with increasing density. The average far-field broadening of two weakly turbulent broad-area high-power semiconductor lasers is shown to be quite different for the two structures. (C) 1999 Optical Society of America [S0740-3224(99)00211-8].
引用
收藏
页码：2023 / 2029
页数：7
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