Enhanced multiferroic properties of the high-valence Pr doped BiFeO3 thin film

被引：132
作者：
Yu, Benfang [1 ,2 ]
Li, Meiya [1 ,2 ]
Hu, Zhongqiang [1 ,2 ]
Pei, Ling [1 ,2 ]
Guo, Dongyun [1 ,2 ]
Zhao, Xingzhong [1 ,2 ]
Dong, Shuxiang [3 ]
机构：
[1] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
[2] Wuhan Univ, Key Lab Acoust & Photon Mat & Device, Minist Educ, Wuhan 430072, Peoples R China
[3] Peking Univ, Coll Engn, Beijing 100871, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 18期
关键词：
bismuth compounds; dielectric hysteresis; dielectric thin films; doping; magnetic hysteresis; multiferroics; pulsed laser deposition; X-ray diffraction;
D O I：
10.1063/1.3020296
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High-valence Pr-doped BiFeO3 (BPF) multiferroic thin film was prepared by pulsed laser deposition on a Pt/TiO2/SiO2/Si substrate. X-ray diffraction analysis indicates that the BPF film is of pure phase with a polycrystalline perovskite structure. The BPF film exhibited enhanced multiferroic properties: (i) a rectangular-shaped electric hysteresis loop with a large P-r of 75 mu C/cm(2) and a low E-c of 250 kV/cm at E-max similar to 620 kV/cm, (ii) a saturated magnetic hysteresis loop with a large M-s of 58 emu/cm(3), and (iii) a fatigue-free behavior after being subjected to 1.2x10(9) switching cycles, which were superior to, in some aspects, those of La- or Nd-doped BiFeO3 films reported before.
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页数：3
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