Optical and Thermal Behavior of Germanium Thin Films under Femtosecond Laser Irradiation

被引:6
作者
Abdelmalek, Ahmed [1 ]
Kotsedi, Lebogang [2 ,3 ]
Bedrane, Zeyneb [1 ]
Amara, El-Hachemi [4 ]
Girolami, Marco [5 ]
Maaza, Malik [2 ,3 ]
机构
[1] Tlemcen Univ, Sci Fac, Phys Dept, Theoret Phys Lab, Tilimsen 13000, Algeria
[2] iThemba LABS Natl Res Fdn, Nanosci African Network NANOAFNET, Old Faure Rd,POB 722, ZA-7129 Somerset West, South Africa
[3] Univ South Africa UNISA, Coll Grad Studies, UNESCO UNISA Africa Chair Nanosci Nanotechnol, POB 392, Pretoria, South Africa
[4] CDTA, Ctr Dev Technol Avancees, Baba Hassen 16303, Algeria
[5] CNR, Ist Struttura Mat, Consiglio Nazl Ric ISM, DiaTHEMA Lab,Sede Secondaria Montelibretti, Str Prov 35D,9, I-00010 Rome, Italy
关键词
femtosecond laser; germanium thin films; two-temperature model; impact ionization; ABLATION; DIAMOND; SILICON; THRESHOLDS; SOLIDS;
D O I
10.3390/nano12213786
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this study, we theoretically investigate the response of a germanium thin film under femtosecond pulsed laser irradiation. Electron and lattice temperatures, as well as material-specific optical properties such as dielectric function and reflectivity, were calculated during the irradiation using an extended two-temperature model coupled with the carrier density rate equation and the Drude model. Melting and ablation fluence thresholds were also predicted, resulting in 0.14 J cm(-2) and 0.35 J cm(-2), respectively. An ultrafast change in both optical and thermal properties was detected upon laser irradiation. Results also indicate that thermal melting occurs after germanium takes on a metallic character during irradiation, and that the impact ionization process may have a critical role in the laser-induced thermal effect. Therefore, we suggest that the origin of the thermal modification of germanium surface under femtosecond laser irradiation is mostly due the impact ionization process and that its effect becomes more important when increasing the laser fluence.
引用
收藏
页数:14
相关论文
共 48 条
[1]   Origin of femtosecond laser induced periodic nanostructure on diamond [J].
Abdelmalek, A. ;
Sotillo, B. ;
Bedrane, Z. ;
Bharadwaj, V. ;
Pietralunga, S. ;
Ramponi, R. ;
Amara, E. -H. ;
Eaton, S. M. .
AIP ADVANCES, 2017, 7 (10)
[2]   Morphological Study of Nanostructures Induced by Direct Femtosecond Laser Ablation on Diamond [J].
Abdelmalek, Ahmed ;
Giakoumaki, Argyro N. ;
Bharadwaj, Vibhav ;
Sotillo, Belen ;
Thien Le Phu ;
Bollani, Monica ;
Bedrane, Zeyneb ;
Ramponi, Roberta ;
Eaton, Shane M. ;
Maaza, Malik .
MICROMACHINES, 2021, 12 (05)
[3]   On the theory of ultrashort laser pulse interaction with a metal [J].
Anisimov, SI ;
Rethfeld, B .
NONRESONANT LASER-MATTER INTERACTION (NLMI-9), 1997, 3093 :192-203
[4]   Optimization of black diamond films for solar energy conversion [J].
Bellucci, Alessandro ;
Calvani, Paolo ;
Girolami, Marco ;
Orlando, Stefano ;
Polini, Riccardo ;
Trucchi, Daniele M. .
APPLIED SURFACE SCIENCE, 2016, 380 :8-11
[5]   Femtosecond laser ablation of silicon-modification thresholds and morphology [J].
Bonse, J ;
Baudach, S ;
Krüger, J ;
Kautek, W ;
Lenzner, M .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2002, 74 (01) :19-25
[6]   Time- and space-resolved dynamics of melting, ablation, and solidification phenomena induced by femtosecond laser pulses in germanium [J].
Bonse, Jorn ;
Bachelier, Guillaume ;
Siegel, Jan ;
Solis, Javier .
PHYSICAL REVIEW B, 2006, 74 (13)
[7]   Carriers Temperature Dependence of Energy Band Gap for Germanium [J].
Boukhatem, M. H. .
SILICON, 2016, 8 (02) :309-312
[8]   Pulsed laser ablation of solids: transition from normal vaporization to phase explosion [J].
Bulgakova, NM ;
Bulgakov, AV .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2001, 73 (02) :199-208
[9]   Experimental study of diamond ablation based on femtosecond laser [J].
Cai Jianwen ;
Pan Xuetao ;
Yuan Hongchun ;
Zhang Yafeng ;
Meng Fei ;
Zhang Meifeng .
OPTIK, 2020, 217
[10]   Ultrafast x-ray measurement of laser heating in semiconductors:: Parameters determining the melting threshold -: art. no. 193306 [J].
Cavalleri, A ;
Siders, CW ;
Rose-Petruck, C ;
Jimenez, R ;
Tóth, C ;
Squier, JA ;
Barty, CPJ ;
Wilson, KR ;
Sokolowski-Tinten, K ;
von Hoegen, MH ;
von der Linde, D .
PHYSICAL REVIEW B, 2001, 63 (19)