Characterizations of Electrolyte-Insulator-Semiconductor Sensors With Array Wells and a Stack-Sensing Membrane

被引：7
作者：
Chen, Henry J. H. [1 ]
Huang, Yo-Chen [1 ]
Lee, Tzu Nien [1 ]
Chen, Sun-Zen [2 ]
机构：
[1] Natl Chi Nan Univ, Dept Elect Engn, Nantou 545, Taiwan
[2] Natl Tsing Hua Univ, Ctr Nanotechnol Mat Sci & Microsyst, Hsinchu 300, Taiwan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2020年 / 67卷 / 09期
关键词：
Sensor arrays; Hysteresis; Sensitivity; Sensor phenomena and characterization; Silicon; Biomembranes; 3-Aminopropyltriethoxysilane (APTES); electrolyte-insulator-semiconductor (EIS); nanoimprint; patterns; FIELD-EFFECT TRANSISTOR; BIOSENSORS; ISFET; CMOS; HFO2;
D O I：
10.1109/TED.2020.3009646
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This study addressed the characteristics of electrolyte-insulator-semiconductor (EIS) pH sensors with array wells and sensing membrane stacks of 3-aminopropyltriethoxysilane (APTES)/SiO2. The arrays of square wells were fabricated by nanoimprint lithography (NIL) and investigated using an atomic force microscope (AFM). The surface chemical properties of molecular APTES on SiO2 were investigated by water contact angle (WCA) studies and X-ray photoelectron spectroscopy (XPS). The sensitivity, hysteresis, and drift of EIS sensors were studied. All of the sensing properties were greatly enhanced by using the techniques we propose. With these improvements, high-performance sensors can be fabricated for future biochemical applications.
引用
收藏
页码：3761 / 3766
页数：6
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