Error modelling of quantum Hall array resistance standards

被引:4
作者
Marzano, Martina [1 ,2 ]
Oe, Takehiko [3 ]
Ortolano, Massimo [1 ,2 ]
Callegaro, Luca [2 ]
Kaneko, Nobu-Hisa [3 ]
机构
[1] Politecn Torino, Corso Duca Abruzzi 24, I-10129 Turin, Italy
[2] INRIM Ist Nazl Ric Metrol, Str Cacce 91, I-10135 Turin, Italy
[3] Natl Inst Adv Ind Sci & Technol, NMIJ, AIST, Tsukuba, Ibaraki 3058563, Japan
关键词
quantum Hall effect; quantum Hall arrays; resistance standards; electrical metrology; uncertainty; EFFECT DEVICES; METROLOGY; SERIES; COPPER; GOLD;
D O I
10.1088/1681-7575/aaa5c1
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Quantum Hall array resistance standards (QHARSs) are integrated circuits composed of interconnected quantum Hall effect elements that allow the realization of virtually arbitrary resistance values. In recent years, techniques were presented to efficiently design QHARS networks. An open problem is that of the evaluation of the accuracy of a QHARS, which is affected by contact and wire resistances. In this work, we present a general and systematic procedure for the error modelling of QHARSs, which is based on modern circuit analysis techniques and Monte Carlo evaluation of the uncertainty. As a practical example, this method of analysis is applied to the characterization of a 1 MO QHARS developed by the National Metrology Institute of Japan. Software tools are provided to apply the procedure to other arrays.
引用
收藏
页码:167 / 174
页数:8
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