Morphological control of MgxZn1-xO layers grown on Ga:ZnO/glass substrates for photovoltaics

被引：1

作者：

Duan, Ziqing ^{[1
]}

Lu, Yicheng ^{[1
]}

Du Pasquier, Aurelien ^{[2
]}

机构：

[1] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

[2] Rutgers State Univ, Dept Mat Sci & Engn, N Brunswick, NJ 08902 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2012年 / 352卷 / 01期

基金：

美国国家科学基金会;

关键词：

Nanostructures; Surface morphology; Metalorganic chemical vapor deposition; Mg(x)Zni(1-x)O alloy; Semiconducting II-VI materials; Solar cells; OPEN-CIRCUIT VOLTAGE; SOLAR-CELLS; BAND-OFFSET; ZNO; QUALITY; FILMS; MBE;

D O I：

10.1016/j.jcrysgro.2011.11.078

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

MgxZn1-xO has been used in various photovoltaic cells because its energy bandgap can be tailored by controlling the Mg composition in this ternary compound. The MgxZn1-xO layers with different surface morphologies including two-dimensional (2-D) films and one-dimensional (1-D) nanostructures are preferred for conventional p-n junction solar cells and polymer-inorganic hybrid solar cells, respectively. The MgxZn1-xO layers are sequentially grown on Ga-doped ZnO (GZO) transparent conductive electrode using metalorganic chemical vapor deposition (MOCVD). The effect of the buffer layers on MgxZn1-xO surface morphology is investigated. It is observed that MgxZn1-xO deposited at 500 C on a low-temperature (similar to 250 degrees C) ZnO buffer layer is in the form of 2-D dense and smooth films, whereas, on a high-temperature (similar to 520 degrees C) ZnO buffer layer is in the form of 1-D nanostructures. Based on the structure characterization results, a growth mechanism in terms of nucleation and texturing is proposed to explain the buffer layer effect. (c) 2011 Elsevier B.V. All rights reserved.

引用

页码：190 / 193

页数：4

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