Light emission by semiconductor structure with quantum well and array of quantum dots

被引：9
|
作者：
Evtikhiev, VP [1 ]
Konstantinov, OV [1 ]
Matveentsev, AV [1 ]
Romanov, AE [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2002年 / 36卷 / 01期
关键词：
GaAs; Energy Level; Active Region; Magnetic Material; Electromagnetism;
D O I：
10.1134/1.1434517
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A new type of composite active region of a laser, which contains an In0.2Ga0.8As quantum well (QW) and an array of InAs quantum dots (QDs) embedded in GaAs is studied. The QW acts as accumulator of injected carriers, and the QD array is the emitting system located in tunneling proximity to the QW. A theory for the calculation of electron and hole energy levels in the QD is developed. Occupation of the QDs due to the resonance tunneling of electrons and holes from the QW to the QD is considered; the conclusions are compared with the results obtained in studying an experimental laser with a combined active region. (C) 2002 MAIK "Nauka / Interperiodica".
引用
收藏
页码：74 / 80
页数：7
相关论文
共 50 条
  • [31] Photoluminescence of InSb quantum dots in GaAs and GaSb matrices
    Tsatsulnikov, AF
    Ledentsov, NN
    Maksimov, MV
    Meltser, BY
    Neklyudov, PV
    Shaposhnikov, SV
    Volovik, BV
    Krestnikov, IL
    Sakharov, AV
    Bert, NA
    Kopev, PS
    Alferov, ZI
    Bimberg, D
    SEMICONDUCTORS, 1997, 31 (01) : 55 - 57
  • [32] Acoustical phonon broadening of the exciton line in semiconductor single quantum dots
    Ikeda, K
    Minami, F
    Kuroda, S
    Takita, K
    Koguchi, N
    JOURNAL OF LUMINESCENCE, 2004, 108 (1-4) : 375 - 378
  • [33] Photoluminescence of InSb quantum dots in GaAs and GaSb matrices
    A. F. Tsatsul’nikov
    N. N. Ledentsov
    M. V. Maksimov
    B. Ya. Mel’tser
    P. V. Neklyudov
    S. V. Shaposhnikov
    B. V. Volovik
    I. L. Krestnikov
    A. V. Sakharov
    N. A. Bert
    P. S. Kop’ev
    Zh. I. Alferov
    D. Bimberg
    Semiconductors, 1997, 31 : 55 - 57
  • [34] Effect of size dispersion on the optical absorption of an ensemble of semiconductor quantum dots
    M. I. Vasilevskii
    E. I. Akinkina
    A. M. de Paula
    E. V. Anda
    Semiconductors, 1998, 32 : 1229 - 1233
  • [35] Intense laser field effect on impurity states in a semiconductor quantum well: transition from the single to double quantum well potential
    C. A. Duque
    M. E. Mora-Ramos
    E. Kasapoglu
    H. Sari
    I. Sökmen
    The European Physical Journal B, 2011, 81 : 441 - 449
  • [36] A Light-Hole Germanium Quantum Well on Silicon
    Assali, Simone
    Attiaoui, Anis
    Del Vecchio, Patrick
    Mukherjee, Samik
    Nicolas, Jerome
    Moutanabbir, Oussama
    ADVANCED MATERIALS, 2022, 34 (27)
  • [37] ELECTRONIC STRUCTURE OF INAS/GAAS/GAASSB QUANTUM DOTS
    Humlicek, Josef
    Klenovsky, Petr
    Munzar, Dominik
    NANOCON 2011, 2011, : 39 - 44
  • [38] Tuning of the detection wavelength in quantum dots-in-a-well infrared photodetectors
    Hoglund, L.
    Holtz, P. O.
    Asplund, C.
    Wang, Q.
    Almqvist, S.
    Petrini, E.
    Malm, H.
    Pettersson, H.
    Andersson, J. Y.
    INFRARED TECHNOLOGY AND APPLICATIONS XXXIV, PTS 1 AND 2, 2008, 6940
  • [39] Optical study of InP quantum dots
    D. A. Vinokurov
    V. A. Kapitonov
    D. N. Nikolaev
    Z. N. Sokolova
    I. S. Tarasov
    Semiconductors, 2001, 35 : 235 - 237
  • [40] Tunneling Through Metallic Quantum Dots
    M. Tinkham
    D. Davidović
    D. C. Ralph
    C. T. Black
    Journal of Low Temperature Physics, 2000, 118 : 271 - 285
12345