Pentacene thin-film transistors with thin polymer gate dielectric and silver electrode

被引：0

作者：

Kim, J. H. ^{[1
]}

Song, K. C. ^{[2
]}

Beak, K. -H. ^{[1
]}

Kim, D. J. ^{[2
]}

Do, L. M. ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, 138 Gajeongdong, Taejon 305700, South Korea

[2] Chungnam Natl Univ, Daejeon 305764, South Korea

来源：

IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on organic transistors with a thin polymer gate dielectric driven with low-voltage. Using low cost processible metal electrodes such as aluminum gate and silver source/drain, 240 nm thin poly-4-vinylphenol (PVP) dielectric, and pentacene semiconductor, we obtained devices on glass with mobilities > 1 cm(2)/VS. As baking temperature of PVP dielectric is increased, the mobility of TFTs is improved.

引用

页码：2005 / +

页数：2

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