Development of a Boost Converter for PV Systems based on SiC BJTs

被引：0

作者：

Hensel, A. ^{[1
]}

Wilhelm, C. ^{[1
]}

Kranzer, D. ^{[1
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst ISE, D-79110 Freiburg, Germany

来源：

PROCEEDINGS OF THE 2011-14TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE 2011) | 2011年

关键词：

Bipolar Junction Transistor (BJT); Device characterisation; Efficiency; Converter circuit; Device application; High power density systems; Photovoltaics; Power semiconductor device; Renewable energy systems; Silicon Carbide (SiC); Wide bandgab devices;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the past years new power switching devices based on wide bandgap materials like silicon carbide (SiC) were more and more coming up, promising more efficient, smaller and lighter converter circuits. This paper demonstrates the advantages of the SiC bipolar junction transistor (BJT) by the realisation of a boost converter stage for photovoltaic (PV) systems. First the key attributes (on-state behaviour and switching losses) of the devices are reviewed. By this measurements, the driving circuits in the boost converter are optimized in order to achieve high efficiency. The application of SiC BJTs in a high efficient 5 kW boost converter stage for PV systems (300 V -> 800 V) is demonstrated and the results are compared to the results obtained with the application of common silicon (Si) IGBTs.

引用

页数：7