First-principles calculations of band offsets and polarization effects at InAs/InP interfaces

被引：7

作者：

Hajlaoui, C. ^{[1
,2
]}

Pedesseau, L. ^{[1
]}

Raouafi, F. ^{[2
]}

Larbi, F. Ben Cheikh ^{[2
]}

Even, J. ^{[1
]}

Jancu, J-M ^{[1
]}

机构：

[1] Univ Europeenne Bretagne, INSA Rennes, CNRS, UMR 6082,FOTON OHM, F-35708 Rennes, France

[2] Univ Carthage, Inst Preparatoire Etud Sci & Tech, Lab Physicochim microstruct & Microsyst, La Marsa 2078, Tunisia

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2015年 / 48卷 / 35期

关键词：

first-principles calculations; band alignment; polarization; InAs/InP heterojonctions;

D O I：

10.1088/0022-3727/48/35/355105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have performed first-principles calculations of the band alignment of InAs/InP heterojonctions on InP. The strained valence-band offset of 0.43 eV and 0.38 eV is calculated for the cubic and wurtzite phases respectively. No built-in electric fields are evidenced in the simulations. Spontaneous polarization and piezoelectric constants are calculated for both InP and InAs. The flat-band alignment and its dependence on crystalline phases implicate a possible way of patterning InAs/InP quantum wire structures with thickness engineering and electronic properties suited for optical devices.

引用

页数：5

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