Effects of Co content on the Cu diffusion barrier property of electroless NiCoP film

被引：5

作者：

Lee, Hong-Kee ^{[1
]}

Jeon, Jun-Mi ^{[1
]}

Lee, Min Hyung ^{[1
]}

Lee, Ho-Nyun ^{[1
]}

Hur, Jin-Young ^{[1
]}

机构：

[1] Korea Inst Ind Technol, Incheon Reg Div, Technol Applicat Dept, Heat Treatment & Plating Technol Ctr, Inchon 406840, South Korea

来源：

METALS AND MATERIALS INTERNATIONAL | 2013年 / 19卷 / 01期

关键词：

semiconductors; plating; diffusion; auger electron spectroscopy (AES); Cu interconnect; COPPER INTERCONNECTS; PLASMA TREATMENT; CAPPING LAYERS; THIN-FILMS; PERFORMANCE; DEPOSITION;

D O I：

10.1007/s12540-013-1019-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The characteristics of electroless NiCoP films were investigated as a function of Co content. Sheet resistance of a multi-stacked film of SiO2/Ta/Cu/NiP dramatically increased after annealing at 500 A degrees C, but as more Co was co-plated in NiCoP film, the change in sheet resistance of the stacked film of SiO2/Ta/Cu/NiCoP at 500 A degrees C became smaller. A CoP/Cu film showed no change in resistance value after annealing, which indicates the CoP film is the most effective Cu diffusion barrier. X-ray diffraction analysis showed that an as-plated NiP film of amorphous structure is easily crystallized by thermal annealing over 300 A degrees C, while CoP showed an insignificant change in crystal structure by thermal annealing up to 500 A degrees C. This result reveals that the CoP film is capable of preventing the diffusion of Cu at 500 A degrees C due to the thermal stability of CoP film.

引用

页码：119 / 122

页数：4

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