Photoluminescence in laser-crystallized polycrystalline silicon

被引：1

作者：

Brendel, K ^{[1
]}

Nickel, NH ^{[1
]}

Lips, K ^{[1
]}

Fuhs, W ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-12489 Berlin, Germany

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2002年 / 299卷

关键词：

D O I：

10.1016/S0022-3093(01)00973-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Photoluminescence measurements were performed on thin laser-crystallized polycrystalline silicon (poly-Si) films at 5 K. The photoluminescence (PL) peak position and intensity depend on the crystallinity of the films. In fully crystallized films band-to-band recombination is observed at 1.16 eV. In partially crystallized samples a two-layer system arises with poly-Si on top of an amorphous layer. In this case the PL spectrum is determined by the amorphous silicon layer. None of the samples exhibits a detectable defect luminescence. The presence of hydrogen in the initially amorphous material does not affect the radiative emission of the fully crystallized poly-Si films. However. post-hydrogenation of poly-Si causes considerable enhancement of the PL intensity. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：658 / 662

页数：5

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