Quantum ballistic transport in constrictions of n-PbTe

被引:18
作者
Grabecki, G
Wróbel, J
Dietl, T
Byczuk, K
Papis, E
Kaminska, E
Piotrowska, A
Springholz, G
Pinczolits, M
Bauer, G
机构
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] Univ Warsaw, Inst Theoret Phys, PL-00681 Warsaw, Poland
[3] Inst Electron Technol, PL-02668 Warsaw, Poland
[4] Johannes Kepler Univ, Inst Halbleiterphys, A-4040 Linz, Austria
来源
PHYSICAL REVIEW B | 1999年 / 60卷 / 08期
关键词
D O I
10.1103/PhysRevB.60.R5133
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Conductance of submicron constrictions of PbTe:Bi was studied up to 8 T and between 4.2 K and 50 mK(. The structures were fabricated by electron beam lithography and chemical etching of high-electron mobility films grown by molecular beam epitaxy on BaF2. In the moderately strong magnetic fields perpendicular to the current, B greater than or equal to 1 T, the conductance shows accurate quantization in the units of le(2)/h as a function of the side-gate voltage. In the absence of the field, a temperature-independent step structure, with an average step height of approximate to e(2)/h, is observed. It is suggested that such a quantization may reflect the lifting of the Kramers degeneracy by the exchange interaction among the electrons, effective despite a large dielectric constant of bulk PbTe. [S0163- 1829(99)50532-8].
引用
收藏
页码:R5133 / R5136
页数:4
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