Accurate Transient Calorimetric Measurement of Soft-Switching Losses of 10-kV SiC MOSFETs and Diodes

The characterization of soft-switching losses (SSL) of modern high-voltage SiC MOSFETs is a difficult but necessary task in order to provide a sound basis for the accurate modeling of converter systems, such as medium-voltage-connected solid-state transformers, where soft-switching techniques are employed to achieve an improved converter efficiency. Switching losses (SL), in general, are typically measured with the well-known double pulse method. In the case of SSL measurements, however, this method is very sensitive to the limited accuracy of the measurement of the current and voltage transients, and thus is unsuitable for the characterization of fast-switching high-voltage MOSFETs. This paper presents an accurate and reliable calorimetric method for the determination of SSL using the example of 10-kV SiC MOSFET modules. Measured SSL curves are presented for different dc-link voltages and switched currents. Furthermore, a deeper analysis concerning the origin of SSL is performed. With the proposed measurement method, it can be experimentally proven that the largest share of the SSL arises from charging and discharging the output capacitance of the MOSFET module and especially of the antiparallel junction barrier Schottky diode.