Local vibrational modes as a probe of activation process in p-type GaN

被引：56

作者：

Harima, H

Inoue, T

Nakashima, S

Ishida, M

Taneya, M

机构：

[1] Osaka Univ, Dept Appl Phys, Osaka 5650871, Japan

[2] Sharp Corp, Adv Technol Res Labs, Nara 6328567, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 10期

关键词：

D O I：

10.1063/1.124701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Raman spectra for a series of Mg-doped GaN films grown by metal organic chemical vapor deposition and annealed in N-2 ambiance at different temperatures have been investigated. Some local vibrational modes related to hydrogen were observed, showing drastic changes with the annealing temperature. The spectra show clearly that H impurities incorporated in as-grown films, which passivate Mg acceptors, are released from the Mg-N bonding at above similar to 600 degrees C, and diffuse in the film to form new chemical bondings. We have also observed a local mode related to activated Mg acceptors. This mode is conveniently used as a probe of the activation process of Mg acceptors. (C) 1999 American Institute of Physics. [S0003-6951(99)02436-5].

引用

页码：1383 / 1385

页数：3

共 17 条

[1]

AMONO H, 1989, JPN J APPL PHYS, V28, pL2112

[2] LOCAL VIBRATIONAL-MODES IN MG-DOPED GALLIUM NITRIDE [J].

BRANDT, MS ;

AGER, JW ;

GOTZ, W ;

JOHNSON, NM ;

HARRIS, JS ;

MOLNAR, RJ ;

MOUSTAKAS, TD .

PHYSICAL REVIEW B, 1994, 49 (20) :14758-14761

[3] Local vibrational modes of the Mg-H acceptor complex in GaN [J].

Gotz, W ;

Johnson, NM ;

Bour, DP ;

McCluskey, MD ;

Haller, EE .

APPLIED PHYSICS LETTERS, 1996, 69 (24) :3725-3727

[4] Electronic properties in p-type GaN studied by Raman scattering [J].

Harima, H ;

Inoue, T ;

Nakashima, S ;

Furukawa, K ;

Taneya, M .

APPLIED PHYSICS LETTERS, 1998, 73 (14) :2000-2002

[5] Local vibrational modes in Mg-doped GaN grown by molecular beam epitaxy [J].

Kaschner, A ;

Siegle, H ;

Kaczmarczyk, G ;

Strassburg, M ;

Hoffmann, A ;

Thomsen, C ;

Birkle, U ;

Einfeldt, S ;

Hommel, D .

APPLIED PHYSICS LETTERS, 1999, 74 (22) :3281-3283

[6] On the incorporation of Mg and the role of oxygen, silicon, and hydrogen in GaN prepared by reactive molecular beam epitaxy [J].

Kim, W ;

Botchkarev, AE ;

Salvador, A ;

Popovici, G ;

Tang, H ;

Morkoc, H .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (01) :219-226

[7] Thermal stability of GaN investigated by Raman scattering [J].

Kuball, M ;

Demangeot, F ;

Frandon, J ;

Renucci, MA ;

Massies, J ;

Grandjean, N ;

Aulombard, RL ;

Briot, O .

APPLIED PHYSICS LETTERS, 1998, 73 (07) :960-962

[8] Raman scattering in ion-implanted GaN [J].

Limmer, W ;

Ritter, W ;

Sauer, R ;

Mensching, B ;

Liu, C ;

Rauschenbach, B .

APPLIED PHYSICS LETTERS, 1998, 72 (20) :2589-2591

[9] HOLE COMPENSATION MECHANISM OF P-TYPE GAN FILMS [J].

NAKAMURA, S ;

IWASA, N ;

SENOH, M ;

MUKAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (5A) :1258-1266

[10] HYDROGEN IN GAN - NOVEL ASPECTS OF A COMMON IMPURITY [J].

NEUGEBAUER, J ;

VAN DE WALLE, CG .

PHYSICAL REVIEW LETTERS, 1995, 75 (24) :4452-4455

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