An improved SPICE model for low-voltage power MOSFET devices

被引：0
|
作者：
Galadi, A. [1 ]
Hassani, M. M. [2 ]
机构：
[1] Univ Ibn Tofail, Lab Environm & Energie Renouvelable, Fac Sci, Dept Phys, Kenitra, Morocco
[2] Univ Cadi Ayyad, Lab Elect & Instrumentat, Fac Sci, Dept Phys, Marrakech, Morocco
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2013年 / 15卷 / 5-6期
关键词：
Power VDMOSFET; Breakdown voltage; SPICE model; Validation;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper new SPICE power MOSFET model is presented. This model is based on physical structure of power MOSFET and describes more accurately the all operation regions of the device. The new semi-empirical model uses new expressions of the current-voltage relationship in the linear and subthreshold regions. The proposed model is validated by comparison between simulation and experimental data.
引用
收藏
页码：457 / 462
页数：6
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